PBSS302PDH Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 175 @ 2A 2V.The collector emitter saturation voltage is -46mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A transition frequency of 110MHz is present in the part.A breakdown input voltage of 40V volts can be used.Maximum collector currents can be below 4A volts.

PBSS302PDH Features

the DC current gain for this device is 175 @ 2A 2V
a collector emitter saturation voltage of -46mV
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 110MHz

PBSS302PDH Applications

There are a lot of Nexperia USA Inc. PBSS302PDH applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter