JAN2N3250A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3250A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/323
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
360mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
60V
Turn Off Time-Max (toff)
250ns
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3250A Product Details
JAN2N3250A Overview
DC current gain in this device equals 50 @ 10mA 1V, which is the ratio of the base current to the collector current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).As a result, the part has a transition frequency of 250MHz.During maximum operation, collector current can be as low as 200mA volts.
JAN2N3250A Features
the DC current gain for this device is 50 @ 10mA 1V the vce saturation(Max) is 500mV @ 5mA, 50mA a transition frequency of 250MHz
JAN2N3250A Applications
There are a lot of Microsemi Corporation JAN2N3250A applications of single BJT transistors.