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JAN2N3700

JAN2N3700

JAN2N3700

Microsemi Corporation

JAN2N3700 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3700 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/391
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation500mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA 10V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1859 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.614000$3.614
10$3.409434$34.09434
100$3.216447$321.6447
500$3.034384$1517.192
1000$2.862626$2862.626

JAN2N3700 Product Details

JAN2N3700 Overview


In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 7V to gain high efficiency.In this part, there is a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.

JAN2N3700 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

JAN2N3700 Applications


There are a lot of Microsemi Corporation JAN2N3700 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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