BD13810STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.As you can see, the part has a transition frequency of 3MHz.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 1.5A volts can be achieved.
BD13810STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 3MHz
BD13810STU Applications
There are a lot of ON Semiconductor BD13810STU applications of single BJT transistors.
- Driver
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- Interface
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- Muting
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- Inverter
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