2SAR513PT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 50mA 2V.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 25mA, 500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.There is a transition frequency of 400MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 1A volts.
2SAR513PT100 Features
the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 400MHz
2SAR513PT100 Applications
There are a lot of ROHM Semiconductor 2SAR513PT100 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
