JAN2N3715 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N3715 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/408
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
5W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 3A 2V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204AA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 2A, 10A
Transition Frequency
2.5MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3715 Product Details
JAN2N3715 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 3A 2V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Parts of this part have transition frequencies of 2.5MHz.Collector current can be as low as 10A volts at its maximum.
JAN2N3715 Features
the DC current gain for this device is 30 @ 3A 2V the vce saturation(Max) is 2.5V @ 2A, 10A the emitter base voltage is kept at 7V a transition frequency of 2.5MHz
JAN2N3715 Applications
There are a lot of Microsemi Corporation JAN2N3715 applications of single BJT transistors.