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JAN2N3715

JAN2N3715

JAN2N3715

Microsemi Corporation

JAN2N3715 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3715 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2002
Series Military, MIL-PRF-19500/408
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation5W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Pin Count2
Reference Standard MIL
JESD-30 Code O-MBFM-P2
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3A 2V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-204AA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A
Transition Frequency 2.5MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:1845 items

JAN2N3715 Product Details

JAN2N3715 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 3A 2V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 2A, 10A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Parts of this part have transition frequencies of 2.5MHz.Collector current can be as low as 10A volts at its maximum.

JAN2N3715 Features


the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz

JAN2N3715 Applications


There are a lot of Microsemi Corporation JAN2N3715 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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