JAN2N3737 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JAN2N3737 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AB, TO-46-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/395
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.95
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
900mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A 1.5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Turn Off Time-Max (toff)
60ns
Turn On Time-Max (ton)
48ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N3737 Product Details
JAN2N3737 Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 100mA, 1A.Maximum collector currents can be below 1.5A volts.
JAN2N3737 Features
the DC current gain for this device is 20 @ 1A 1.5V the vce saturation(Max) is 900mV @ 100mA, 1A
JAN2N3737 Applications
There are a lot of Microsemi Corporation JAN2N3737 applications of single BJT transistors.