JAN2N5662 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N5662 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/454
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MIL-19500
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
800mV @ 400mA, 2A
Current - Collector (Ic) (Max)
2A
Collector Base Voltage (VCBO)
250V
Turn Off Time-Max (toff)
850ns
Turn On Time-Max (ton)
250ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JAN2N5662 Product Details
JAN2N5662 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 500mA 5V.A VCE saturation (Max) of 800mV @ 400mA, 2A means Ic has reached its maximum value(saturated).During maximum operation, collector current can be as low as 2A volts.
JAN2N5662 Features
the DC current gain for this device is 40 @ 500mA 5V the vce saturation(Max) is 800mV @ 400mA, 2A
JAN2N5662 Applications
There are a lot of Microsemi Corporation JAN2N5662 applications of single BJT transistors.