BD243C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD243C Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Weight
1.8g
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Voltage - Rated DC
100V
Max Power Dissipation
65W
Current Rating
6A
Base Part Number
BD243
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
65W
Power - Max
65W
Gain Bandwidth Product
3MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage
100V
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
6A
Collector Emitter Saturation Voltage
1.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
Height
15.95mm
Length
10mm
Width
4.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.363538
$0.363538
10
$0.342960
$3.4296
100
$0.323547
$32.3547
500
$0.305233
$152.6165
1000
$0.287956
$287.956
BD243C Product Details
BD243C BJT Description
The 6 A, 100 V PNP Bipolar Power TransistorBD243C is designed for use in general-purpose amplifier and switching applications. The device is manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. BD244B and BD244C (PNP) are complementary to this part and they're all available in the TO-220 package.
BD243C BJT Features
Collector-Emitter Voltage: 100 V
Collector-Base Voltage: 100 V
Emitter-Base Voltage: 5 V
6 A Continuous Collector Current
65 W at 25°C Case Temperature
High Current Gain Bandwidth: fT = 3.0 MHz (Min) @ IC = 500 mAdc