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BD243C

BD243C

BD243C

ON Semiconductor

BD243C datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD243C Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Weight 1.8g
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 100V
Max Power Dissipation 65W
Current Rating 6A
Base Part Number BD243
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 65W
Power - Max 65W
Gain Bandwidth Product 3MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Collector Emitter Breakdown Voltage 100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 6A
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 15.95mm
Length 10mm
Width 4.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.363538 $0.363538
10 $0.342960 $3.4296
100 $0.323547 $32.3547
500 $0.305233 $152.6165
1000 $0.287956 $287.956
BD243C Product Details

BD243C BJT Description


The 6 A, 100 V PNP Bipolar Power Transistor BD243C is designed for use in general-purpose amplifier and switching applications. The device is manufactured in Planar technology with a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. BD244B and BD244C (PNP) are complementary to this part and they're all available in the TO-220 package.



BD243C BJT Features


  • Collector-Emitter Voltage: 100 V

  • Collector-Base Voltage: 100 V

  • Emitter-Base Voltage: 5 V

  • 6 A Continuous Collector Current

  • 65 W at 25°C Case Temperature

  • High Current Gain Bandwidth: fT = 3.0 MHz (Min) @ IC = 500 mAdc

  • Compact TO-220 AB Package

  • Pb-Free Packages are Available



BD243C BJT Applications


  • Medium Power Linear and Switching Applications

  • Driving or Switching Loads under 6A

  • High Power Audio Amplifier Circuits

  • BMS Applications

  • Motor Drivers

  • Battery Chargers

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