JAN2N6770

new-10%

Manufacturer part number:JAN2N6770

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3

Case Package:SOT-23

Datasheet:JAN2N6770 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Contact Plating	Lead, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-204AE
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/543
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin/Lead (Sn/Pb)
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	PIN/PEG
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	O-MBFM-P2
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4W Ta 150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	4W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	190ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-204AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.4Ohm
Pulsed Drain Current-Max (IDM)	48A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	750 mJ
Turn Off Time-Max (toff)	300ns
Turn On Time-Max (ton)	225ns
RoHS Status	Non-RoHS Compliant