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JAN2N6790U

JAN2N6790U

JAN2N6790U

Microsemi Corporation

MOSFET N-CH 18-LCC

SOT-23

JAN2N6790U Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/555
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Additional Feature HIGH RELIABILTY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 18/15
Reference Standard MIL-19500
JESD-30 Code R-CQCC-N15
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Tc
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 850m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 14.3nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 2.8A
Drain Current-Max (Abs) (ID) 3.5A
Drain-source On Resistance-Max 0.85Ohm
Pulsed Drain Current-Max (IDM) 11A
DS Breakdown Voltage-Min 200V
RoHS Status Non-RoHS Compliant

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