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PBSS301PD,115

PBSS301PD,115

PBSS301PD,115

Nexperia USA Inc.

PBSS301PD,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS301PD,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 80MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBSS301P
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 80MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 420mV @ 600mA, 6A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 80MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Turn On Time-Max (ton) 45ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.402640 $14.40264
10 $13.587396 $135.87396
100 $12.818298 $1281.8298
500 $12.092734 $6046.367
1000 $11.408240 $11408.24
PBSS301PD,115 Product Details

PBSS301PD,115 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 420mV @ 600mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.80MHz is present in the transition frequency.As a result, it can handle voltages as low as 20V volts.A maximum collector current of 4A volts is possible.

PBSS301PD,115 Features


the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 420mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 80MHz

PBSS301PD,115 Applications


There are a lot of Nexperia USA Inc. PBSS301PD,115 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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