NSS60201LT1G Overview
This device has a DC current gain of 150 @ 1A 2V, which is the ratio between the collector current and the base current.When VCE saturation is 140mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 60V volts.A maximum collector current of 2A volts can be achieved.
NSS60201LT1G Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 140mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 100MHz
NSS60201LT1G Applications
There are a lot of ON Semiconductor NSS60201LT1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
