JANTX2N2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N2369A Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/317
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
400nA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic
450mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
15V
Transition Frequency
500MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4.5V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
160
$6.09944
$975.9104
JANTX2N2369A Product Details
JANTX2N2369A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As a result, the part has a transition frequency of 500MHz.Single BJT transistor is possible to have a collector current as low as 400nA volts at Single BJT transistors maximum.
JANTX2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V the vce saturation(Max) is 450mV @ 10mA, 100mA the emitter base voltage is kept at 4.5V a transition frequency of 500MHz
JANTX2N2369A Applications
There are a lot of Microsemi Corporation JANTX2N2369A applications of single BJT transistors.