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JANTX2N2369A

JANTX2N2369A

JANTX2N2369A

Microsemi Corporation

JANTX2N2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N2369A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/317
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 360mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 360mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 500MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 4.5V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
160 $6.09944 $975.9104
JANTX2N2369A Product Details

JANTX2N2369A Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 100mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As a result, the part has a transition frequency of 500MHz.Single BJT transistor is possible to have a collector current as low as 400nA volts at Single BJT transistors maximum.

JANTX2N2369A Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz

JANTX2N2369A Applications


There are a lot of Microsemi Corporation JANTX2N2369A applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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