PBSS303PX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS303PX,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Form
FLAT
Base Part Number
PBSS303P
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
230mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
130MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
320ns
Turn On Time-Max (ton)
70ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.815280
$0.81528
10
$0.769132
$7.69132
100
$0.725596
$72.5596
500
$0.684525
$342.2625
1000
$0.645778
$645.778
PBSS303PX,115 Product Details
PBSS303PX,115 Overview
This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 230mV @ 255mA, 5.1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.130MHz is present in the transition frequency.Breakdown input voltage is 30V volts.Collector current can be as low as 5.1A volts at its maximum.
PBSS303PX,115 Features
the DC current gain for this device is 200 @ 2A 2V the vce saturation(Max) is 230mV @ 255mA, 5.1A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS303PX,115 Applications
There are a lot of Nexperia USA Inc. PBSS303PX,115 applications of single BJT transistors.