PBSS303PX,115 Overview

This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 230mV @ 255mA, 5.1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.130MHz is present in the transition frequency.Breakdown input voltage is 30V volts.Collector current can be as low as 5.1A volts at its maximum.

PBSS303PX,115 Features

the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 230mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS303PX,115 Applications

There are a lot of Nexperia USA Inc. PBSS303PX,115 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter