TTA1713-Y,LF

join

new-10%

Manufacturer part number:TTA1713-Y,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:TTA1713-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:TTA1713-Y,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	200mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	500mA
Frequency - Transition	80MHz
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.183937	$0.183937
10	$0.173525	$1.73525
100	$0.163703	$16.3703
500	$0.154437	$77.2185
1000	$0.145695	$145.695

TTA1713-Y,LF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.