JANTX2N5663 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N5663 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/454
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MIL-19500
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 500mA 5V
Current - Collector Cutoff (Max)
200nA
Vce Saturation (Max) @ Ib, Ic
800mV @ 400mA, 2A
Current - Collector (Ic) (Max)
2A
Collector Base Voltage (VCBO)
400V
Turn Off Time-Max (toff)
1200ns
Turn On Time-Max (ton)
250ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTX2N5663 Product Details
JANTX2N5663 Overview
DC current gain in this device equals 25 @ 500mA 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maximum collector currents can be below 2A volts.
JANTX2N5663 Features
the DC current gain for this device is 25 @ 500mA 5V the vce saturation(Max) is 800mV @ 400mA, 2A
JANTX2N5663 Applications
There are a lot of Microsemi Corporation JANTX2N5663 applications of single BJT transistors.