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JANTX2N6350

  • JANTX2N6350
  • JANTX2N6350

JANTX2N6350

JANTX2N6350

Microsemi Corporation

JANTX2N6350 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6350 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AC, TO-33-4 Metal Can
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/472
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 4
Qualification Status Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 5A 5V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 5A
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
Turn On Time-Max (ton) 500ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTX2N6350 Product Details

JANTX2N6350 Overview


This device has a DC current gain of 2000 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

JANTX2N6350 Features


the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V

JANTX2N6350 Applications


There are a lot of Microsemi Corporation JANTX2N6350 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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