2SD1623S-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.There is a transition frequency of 150MHz in the part.As a result, it can handle voltages as low as 50V volts.During maximum operation, collector current can be as low as 2A volts.
2SD1623S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1623S-TD-E Applications
There are a lot of ON Semiconductor 2SD1623S-TD-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
