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JANTXV2N3419

JANTXV2N3419

JANTXV2N3419

Microsemi Corporation

JANTXV2N3419 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3419 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 4 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/393
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 2V
Current - Collector Cutoff (Max) 5μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 40MHz
Collector Base Voltage (VCBO) 125V
Emitter Base Voltage (VEBO) 8V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JANTXV2N3419 Product Details

JANTXV2N3419 Overview


DC current gain in this device equals 20 @ 1A 2V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.The part has a transition frequency of 40MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

JANTXV2N3419 Features


the DC current gain for this device is 20 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
a transition frequency of 40MHz

JANTXV2N3419 Applications


There are a lot of Microsemi Corporation JANTXV2N3419 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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