JANTXV2N3421S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N3421S Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/393
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1A 2V
Current - Collector Cutoff (Max)
5μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Base Voltage (VCBO)
125V
Emitter Base Voltage (VEBO)
8V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
JANTXV2N3421S Product Details
JANTXV2N3421S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 1A 2V.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.During maximum operation, collector current can be as low as 3A volts.
JANTXV2N3421S Features
the DC current gain for this device is 40 @ 1A 2V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 8V
JANTXV2N3421S Applications
There are a lot of Microsemi Corporation JANTXV2N3421S applications of single BJT transistors.