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JANTXV2N3868S

  • JANTXV2N3868S
  • JANTXV2N3868S

JANTXV2N3868S

JANTXV2N3868S

Microsemi Corporation

JANTXV2N3868S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N3868S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/350
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.5A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
Turn Off Time-Max (toff) 600ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $36.57150 $3657.15
JANTXV2N3868S Product Details

JANTXV2N3868S Overview


This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 250mA, 2.5A.Keeping the emitter base voltage at 4V allows for a high level of efficiency.During maximum operation, collector current can be as low as 3A volts.

JANTXV2N3868S Features


the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V

JANTXV2N3868S Applications


There are a lot of Microsemi Corporation JANTXV2N3868S applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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