JANTXV2N4234 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N4234 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/580
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Reference Standard
MIL-19500/580
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 250mA 1V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Base Voltage (VCBO)
40V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$49.84980
$4984.98
JANTXV2N4234 Product Details
JANTXV2N4234 Overview
DC current gain in this device equals 30 @ 250mA 1V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANTXV2N4234 Features
the DC current gain for this device is 30 @ 250mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A
JANTXV2N4234 Applications
There are a lot of Microsemi Corporation JANTXV2N4234 applications of single BJT transistors.