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BD435STU

BD435STU

BD435STU

ON Semiconductor

BD435STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD435STU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 760.986249mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 32V
Max Power Dissipation36W
Current Rating4A
Frequency 3MHz
Base Part Number BD435
Number of Elements 1
Voltage 32V
Element ConfigurationSingle
Current 4A
Power Dissipation36W
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage200mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2867 items

Pricing & Ordering

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BD435STU Product Details

BD435STU Overview


This device has a DC current gain of 40 @ 10mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).A transition frequency of 3MHz is present in the part.Maximum collector currents can be below 4A volts.

BD435STU Features


the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz

BD435STU Applications


There are a lot of ON Semiconductor BD435STU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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