BD435STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD435STU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
760.986249mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
36W
Current Rating
4A
Frequency
3MHz
Base Part Number
BD435
Number of Elements
1
Voltage
32V
Element Configuration
Single
Current
4A
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
200mV
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,920
$0.26719
$0.26719
BD435STU Product Details
BD435STU Overview
This device has a DC current gain of 40 @ 10mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).A transition frequency of 3MHz is present in the part.Maximum collector currents can be below 4A volts.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor BD435STU applications of single BJT transistors.