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MJE181

MJE181

MJE181

ON Semiconductor

MJE181 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE181 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 12.5W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 3A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJE181
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.7V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
MJE181 Product Details

MJE181 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.7V, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.There is a transition frequency of 50MHz in the part.Collector current can be as low as 3A volts at its maximum.

MJE181 Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz

MJE181 Applications


There are a lot of ON Semiconductor MJE181 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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