STB57N65M5

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STB57N65M5

Manufacturer part number:STB57N65M5

Manufacturer:STMicroelectronics

Description:STB57N65M5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB57N65M5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	D2PAK-0079457
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	63mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Technology	MOSFET (Metal Oxide)
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB57N
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
Turn On Delay Time	73 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	63m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	98nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Avalanche Energy Rating (Eas)	960 mJ
Max Junction Temperature (Tj)	150°C
Height	4.83mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free