STW40N90K5                     Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

STW40N90K5                        Features

· Industry’s lowest RDS(on) x area

· Industry’s best FoM (figure of merit)

· Ultra-low gate charge

· 100% avalanche tested

· Zener-protected

STW40N90K5                      Applications

· Switching applications