APT6013JLL

new-10%

Manufacturer part number:APT6013JLL

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 39A SOT-227

Case Package:SOT-23

Datasheet:APT6013JLL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	39A
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	460W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	460W
Case Connection	ISOLATED
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	5630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	39A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	39A
Gate to Source Voltage (Vgs)	30V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free