MMBT2907A RFG Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.

MMBT2907A RFG Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz

MMBT2907A RFG Applications

There are a lot of Taiwan Semiconductor Corporation MMBT2907A RFG applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter