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2PD601ASW,115

  • 2PD601ASW,115
  • 2PD601ASW,115

2PD601ASW,115

2PD601ASW,115

Nexperia USA Inc.

2PD601ASW,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PD601ASW,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PD601A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 290 @ 2mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 290
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.187837 $0.187837
10 $0.177205 $1.77205
100 $0.167174 $16.7174
500 $0.157712 $78.856
1000 $0.148785 $148.785
2PD601ASW,115 Product Details

2PD601ASW,115 Overview


This device has a DC current gain of 290 @ 2mA 10V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 100MHz is present in the part.A maximum collector current of 100mA volts is possible.

2PD601ASW,115 Features


the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

2PD601ASW,115 Applications


There are a lot of Nexperia USA Inc. 2PD601ASW,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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