MMBT6427LT1G Overview

In this device, the DC current gain is 20000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.2V ensures maximum design flexibility.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).A 500mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MMBT6427LT1G Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 600mA
a transition frequency of 130MHz

MMBT6427LT1G Applications

There are a lot of ON Semiconductor MMBT6427LT1G applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface