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D45C12G

D45C12G

D45C12G

Rochester Electronics, LLC

D45C12G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

D45C12G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 30W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 40MHz
RoHS StatusROHS3 Compliant
In-Stock:12997 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.48000$0.48
500$0.4752$237.6
1000$0.4704$470.4
1500$0.4656$698.4
2000$0.4608$921.6
2500$0.456$1140

D45C12G Product Details

D45C12G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.TO-220AB is the supplier device package for this product.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

D45C12G Features


the DC current gain for this device is 40 @ 200mA 1V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-220AB

D45C12G Applications


There are a lot of Rochester Electronics, LLC D45C12G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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