D45C12G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
D45C12G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
30W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.48000
$0.48
500
$0.4752
$237.6
1000
$0.4704
$470.4
1500
$0.4656
$698.4
2000
$0.4608
$921.6
2500
$0.456
$1140
D45C12G Product Details
D45C12G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.TO-220AB is the supplier device package for this product.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
D45C12G Features
the DC current gain for this device is 40 @ 200mA 1V the vce saturation(Max) is 500mV @ 50mA, 1A the supplier device package of TO-220AB
D45C12G Applications
There are a lot of Rochester Electronics, LLC D45C12G applications of single BJT transistors.