2PD602ARL,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PD602ARL,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2PD602
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
250mW
Transistor Application
SWITCHING
Gain Bandwidth Product
160MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
160MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2PD602ARL,215 Product Details
2PD602ARL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 160MHz.The breakdown input voltage is 50V volts.Maximum collector currents can be below 500mA volts.
2PD602ARL,215 Features
the DC current gain for this device is 120 @ 150mA 10V the vce saturation(Max) is 600mV @ 30mA, 300mA the emitter base voltage is kept at 5V a transition frequency of 160MHz
2PD602ARL,215 Applications
There are a lot of Nexperia USA Inc. 2PD602ARL,215 applications of single BJT transistors.