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PN2907ATFR

PN2907ATFR

PN2907ATFR

ON Semiconductor

PN2907ATFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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PN2907ATFR Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating -800mA
Frequency 200MHz
Base Part Number PN2907A
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -1.6V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Turn On Time-Max (ton) 45ns
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.162120 $0.16212
10 $0.152943 $1.52943
100 $0.144286 $14.4286
500 $0.136119 $68.0595
1000 $0.128414 $128.414
PN2907ATFR Product Details

PN2907ATFR Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -1.6V, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.The part has a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.When collector current reaches its maximum, it can reach 800mA volts.

PN2907ATFR Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz

PN2907ATFR Applications


There are a lot of ON Semiconductor PN2907ATFR applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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