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JANTX2N3868

JANTX2N3868

JANTX2N3868

Microsemi Corporation

JANTX2N3868 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N3868 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/350
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1.5A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 2.5A
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 3A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
Turn Off Time-Max (toff) 600ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $35.87000 $35.87
10 $33.17800 $331.78
JANTX2N3868 Product Details

JANTX2N3868 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1.5A 2V.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Single BJT transistor is possible to have a collector current as low as 3mA volts at Single BJT transistors maximum.

JANTX2N3868 Features


the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V

JANTX2N3868 Applications


There are a lot of Microsemi Corporation JANTX2N3868 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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