JANTX2N3868 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3868 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/350
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 1.5A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 250mA, 2.5A
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
3A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
4V
Turn Off Time-Max (toff)
600ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$35.87000
$35.87
10
$33.17800
$331.78
JANTX2N3868 Product Details
JANTX2N3868 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 1.5A 2V.A VCE saturation (Max) of 1.5V @ 250mA, 2.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.Single BJT transistor is possible to have a collector current as low as 3mA volts at Single BJT transistors maximum.
JANTX2N3868 Features
the DC current gain for this device is 30 @ 1.5A 2V the vce saturation(Max) is 1.5V @ 250mA, 2.5A the emitter base voltage is kept at 4V
JANTX2N3868 Applications
There are a lot of Microsemi Corporation JANTX2N3868 applications of single BJT transistors.