BC817-25 RFG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
BC817-25 RFG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
300mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.032640
$0.03264
500
$0.024000
$12
1000
$0.020000
$20
2000
$0.018349
$36.698
5000
$0.017148
$85.74
10000
$0.015952
$159.52
15000
$0.015427
$231.405
50000
$0.015169
$758.45
BC817-25 RFG Product Details
BC817-25 RFG Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of SOT-23.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC817-25 RFG Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the supplier device package of SOT-23
BC817-25 RFG Applications
There are a lot of Taiwan Semiconductor Corporation BC817-25 RFG applications of single BJT transistors.