PMSS3906,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMSS3906,115 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
PMSS3906
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
150MHz
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
VCEsat-Max
0.4 V
Turn Off Time-Max (toff)
700ns
Collector-Base Capacitance-Max
4.5pF
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.654109
$1.654109
10
$1.560480
$15.6048
100
$1.472151
$147.2151
500
$1.388822
$694.411
1000
$1.310209
$1310.209
PMSS3906,115 Product Details
PMSS3906,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 150MHz.An input voltage of 40V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
PMSS3906,115 Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 400mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 150MHz
PMSS3906,115 Applications
There are a lot of Nexperia USA Inc. PMSS3906,115 applications of single BJT transistors.