2SA2180 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SA2180 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 125mA 2V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 125mA, 2.5A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
5A
Transition Frequency
130MHz
Frequency - Transition
130MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.23000
$0.23
500
$0.2277
$113.85
1000
$0.2254
$225.4
1500
$0.2231
$334.65
2000
$0.2208
$441.6
2500
$0.2185
$546.25
2SA2180 Product Details
2SA2180 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 125mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 125mA, 2.5A.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SA2180 Features
the DC current gain for this device is 200 @ 125mA 2V the vce saturation(Max) is 500mV @ 125mA, 2.5A a transition frequency of 130MHz
2SA2180 Applications
There are a lot of Rochester Electronics, LLC 2SA2180 applications of single BJT transistors.