BC847,215 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In the part, the transition frequency is 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.In extreme cases, the collector current can be as low as 100mA volts.

BC847,215 Features

the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847,215 Applications

There are a lot of Nexperia USA Inc. BC847,215 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver