2SAR522UBTL Overview
This device has a DC current gain of 120 @ 1mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.For high efficiency, the continuous collector voltage must be kept at -200mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 350MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
2SAR522UBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 350MHz
2SAR522UBTL Applications
There are a lot of ROHM Semiconductor 2SAR522UBTL applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
