BC847AMB,315 Overview

DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 200mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A maximum collector current of 100mA volts can be achieved.

BC847AMB,315 Features

the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC847AMB,315 Applications

There are a lot of Nexperia USA Inc. BC847AMB,315 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface