BC847AMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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BC847AMB,315 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
250mW
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC847
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.280716
$0.280716
10
$0.264827
$2.64827
100
$0.249836
$24.9836
500
$0.235695
$117.8475
1000
$0.222354
$222.354
BC847AMB,315 Product Details
BC847AMB,315 Overview
DC current gain in this device equals 110 @ 2mA 5V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 200mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A maximum collector current of 100mA volts can be achieved.
BC847AMB,315 Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 200mV @ 500μA, 10mA the emitter base voltage is kept at 6V a transition frequency of 100MHz
BC847AMB,315 Applications
There are a lot of Nexperia USA Inc. BC847AMB,315 applications of single BJT transistors.