2SB1698T100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.When VCE saturation is 370mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 280MHz.Input voltage breakdown is available at 30V volts.The maximum collector current is 1.5A volts.
2SB1698T100 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
2SB1698T100 Applications
There are a lot of ROHM Semiconductor 2SB1698T100 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
