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2SB1698T100

2SB1698T100

2SB1698T100

ROHM Semiconductor

2SB1698T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SB1698T100 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SB1698
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 30V
Max Frequency 100MHz
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -200mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 270
Continuous Collector Current -1.5A
Height 1.4mm
Length 4.7mm
Width 2.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.244423 $5.244423
10 $4.947569 $49.47569
100 $4.667517 $466.7517
500 $4.403318 $2201.659
1000 $4.154074 $4154.074
2SB1698T100 Product Details

2SB1698T100 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.When VCE saturation is 370mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 280MHz.Input voltage breakdown is available at 30V volts.The maximum collector current is 1.5A volts.

2SB1698T100 Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz

2SB1698T100 Applications


There are a lot of ROHM Semiconductor 2SB1698T100 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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