BC849CW,115 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC849CW,115 Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC849CW,115 Applications

There are a lot of Nexperia USA Inc. BC849CW,115 applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver