Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2N2222 PBFREE

2N2222 PBFREE

2N2222 PBFREE

Central Semiconductor Corp

2N2222 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N2222 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 250MHz
RoHS StatusROHS3 Compliant
In-Stock:2482 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.173000$2.173
10$2.050000$20.5
100$1.933962$193.3962
500$1.824493$912.2465
1000$1.721220$1721.22

2N2222 PBFREE Product Details

2N2222 PBFREE Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.6V @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.

2N2222 PBFREE Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA

2N2222 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N2222 PBFREE applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News