MJD32CT4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.As you can see, the part has a transition frequency of 3MHz.This device can take an input voltage of 100V volts before it breaks down.During maximum operation, collector current can be as low as 3A volts.
MJD32CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
MJD32CT4G Applications
There are a lot of ON Semiconductor MJD32CT4G applications of single BJT transistors.
- Driver
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- Inverter
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- Interface
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- Muting
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