CPH6123-TL-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.A collector emitter saturation voltage of -240mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 100mA, 2A.Keeping the emitter base voltage at -6V can result in a high level of efficiency.As a result, the part has a transition frequency of 390MHz.The breakdown input voltage is 50V volts.A maximum collector current of 3A volts can be achieved.

CPH6123-TL-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 650mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 390MHz

CPH6123-TL-E Applications

There are a lot of ON Semiconductor CPH6123-TL-E applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter