2N3964 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3964 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
360mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.71000
$3.71
500
$3.6729
$1836.45
1000
$3.6358
$3635.8
1500
$3.5987
$5398.05
2000
$3.5616
$7123.2
2500
$3.5245
$8811.25
2N3964 PBFREE Product Details
2N3964 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 1mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N3964 PBFREE Features
the DC current gain for this device is 250 @ 1mA 5V the vce saturation(Max) is 400mV @ 5mA, 50mA
2N3964 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3964 PBFREE applications of single BJT transistors.