PBSS4032NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBSS4032NX,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.5W
Frequency
145MHz
Base Part Number
PBSS4032N
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.5W
Gain Bandwidth Product
145MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
4.7A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
340mV @ 270mA, 5.4A
Collector Emitter Breakdown Voltage
30V
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.135194
$2.135194
10
$2.014334
$20.14334
100
$1.900314
$190.0314
500
$1.792750
$896.375
1000
$1.691273
$1691.273
PBSS4032NX,115 Product Details
PBSS4032NX,115 Overview
This device has a DC current gain of 250 @ 2A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 270mA, 5.4A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a breakdown input voltage of 30V volts that it can take.A maximum collector current of 4.7A volts is possible.
PBSS4032NX,115 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 340mV @ 270mA, 5.4A the emitter base voltage is kept at 5V
PBSS4032NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS4032NX,115 applications of single BJT transistors.