BC32725TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.Collector current can be as low as 800mA volts at its maximum.
BC32725TA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BC32725TA Applications
There are a lot of ON Semiconductor BC32725TA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
