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PBSS306PZ,135

PBSS306PZ,135

PBSS306PZ,135

Nexperia USA Inc.

PBSS306PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS306PZ,135 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number PBSS306P
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4.1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 325mV @ 410mA, 4.1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 100MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Turn Off Time-Max (toff) 325ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.478340 $0.47834
10 $0.451264 $4.51264
100 $0.425721 $42.5721
500 $0.401623 $200.8115
1000 $0.378890 $378.89
PBSS306PZ,135 Product Details

PBSS306PZ,135 Overview


In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 325mV @ 410mA, 4.1A.The emitter base voltage can be kept at 5V for high efficiency.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 100V volts that it can take.A maximum collector current of 4.1A volts is possible.

PBSS306PZ,135 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 325mV @ 410mA, 4.1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS306PZ,135 Applications


There are a lot of Nexperia USA Inc. PBSS306PZ,135 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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